

DIODES 2DB1188R-13
Manufacturer No:
2DB1188R-13
Manufacturer:
Package:
TO-243AA
Description:
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
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2DB1188R-13 information
DIODES 2DB1188R-13 technical specifications, attributes, parameters and parts with similar specifications to DIODES 2DB1188R-13.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 4
- Weight
- 51.993025mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Subcategory
- Other Transistors
- Max Power Dissipation
- 1W
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 120MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Base Part Number
- 2DB1188
- JESD-30 Code
- R-PSSO-F3
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 1W
- Case Connection
- COLLECTOR
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 120MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 32V
- Max Collector Current
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 500mA 3V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 800mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage
- 32V
- Transition Frequency
- 120MHz
- Collector Emitter Saturation Voltage
- 800mV
- Max Breakdown Voltage
- 32V
- Collector Base Voltage (VCBO)
- 40V
- Emitter Base Voltage (VEBO)
- 6V
- hFE Min
- 180
- Height
- 1.5mm
- Length
- 4.5mm
Download datasheets and manufacturer documentation for DIODES 2DB1188R-13.
Environmental Information:
2DB1188R-13 Overview
The DC current gain is the ratio of the base current to the collector current ?dc = Ic/Ib and the DC current gain for this device is 180 @ 500mA 3V.With a collector emitter saturation voltage of 800mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 120MHz is present in the part.There is a breakdown input voltage of 32V volts that it can take.Collector current can be as low as 2A volts at its maximum.
2DB1188R-13 Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2DB1188R-13 Applications
There are a lot of Diodes Incorporated
2DB1188R-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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