

Renesas 2SC3624-T1B-A
Manufacturer No:
2SC3624-T1B-A
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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2SC3624-T1B-A information
Renesas 2SC3624-T1B-A technical specifications, attributes, parameters and parts with similar specifications to Renesas 2SC3624-T1B-A.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 1999
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Max Power Dissipation
- 200mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Frequency
- 250MHz
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- Pin Count
- 3
- Number of Elements
- 1
- Configuration
- SINGLE
- Power Dissipation
- 200mW
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 50V
- Max Collector Current
- 150mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 1000 @ 1mA 5V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage
- 50V
- Current - Collector (Ic) (Max)
- 150mA
- Transition Frequency
- 250MHz
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 12V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for Renesas 2SC3624-T1B-A.
ConflictMineralStatement:
2SC3624-T1B-A Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 1mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 12V can result in a high level of efficiency.There is a transition frequency of 250MHz in the part.When collector current reaches its maximum, it can reach 150mA volts.
2SC3624-T1B-A Features
the DC current gain for this device is 1000 @ 1mA 5V
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
a transition frequency of 250MHz
2SC3624-T1B-A Applications
There are a lot of Renesas Electronics America
2SC3624-T1B-A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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