

INFINEON AUIRF6215
Manufacturer No:
AUIRF6215
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) P-Channel Tube 290m ? @ 6.6A, 10V ±20V 860pF @ 25V 66nC @ 10V 150V TO-220-3
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AUIRF6215 information
INFINEON AUIRF6215 technical specifications, attributes, parameters and parts with similar specifications to INFINEON AUIRF6215.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2006
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Additional Feature
- AVALANCHE RATED
- Subcategory
- Other Transistors
- Technology
- MOSFET (Metal Oxide)
- Number of Elements
- 1
- Power Dissipation-Max
- 110W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 110W
- Case Connection
- DRAIN
- Turn On Delay Time
- 14 ns
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 290m ? @ 6.6A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 860pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 13A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 66nC @ 10V
- Rise Time
- 36ns
- Drain to Source Voltage (Vdss)
- 150V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 37 ns
- Turn-Off Delay Time
- 53 ns
- Continuous Drain Current (ID)
- 13A
- Threshold Voltage
- -2V
- JEDEC-95 Code
- TO-220AB
- Gate to Source Voltage (Vgs)
- 20V
- Drain-source On Resistance-Max
- 0.29Ohm
- Drain to Source Breakdown Voltage
- -150V
- Pulsed Drain Current-Max (IDM)
- 44A
- Height
- 16.51mm
- Length
- 10.66mm
- Width
- 4.82mm
- REACH SVHC
- No SVHC
Download datasheets and manufacturer documentation for INFINEON AUIRF6215.
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ConflictMineralStatement:
AUIRF6215 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 860pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -150V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -150V.As a result of its turn-off delay time, which is 53 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 44A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is -2V.The transistor must receive a 150V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
AUIRF6215 Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of -150V voltage
the turn-off delay time is 53 ns
based on its rated peak drain current 44A.
a threshold voltage of -2V
a 150V drain to source voltage (Vdss)
AUIRF6215 Applications
There are a lot of Infineon Technologies
AUIRF6215 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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