

NEXPERIA BC847,215
Manufacturer No:
BC847,215
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
NPN 150°C TJ 15nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
Quantity:
Delivery:




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In Stock :Available
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BC847,215 information
NEXPERIA BC847,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BC847,215.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 4.535924g
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- Termination
- SMD/SMT
- ECCN Code
- EAR99
- Max Power Dissipation
- 250mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Frequency
- 100MHz
- Base Part Number
- BC847
- Pin Count
- 3
- Element Configuration
- Single
- Power Dissipation
- 250mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 100MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 45V
- Max Collector Current
- 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 110 @ 2mA 5V
- Current - Collector Cutoff (Max)
- 15nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 400mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage
- 45V
- Transition Frequency
- 100MHz
- Collector Emitter Saturation Voltage
- 200mV
- Max Breakdown Voltage
- 45V
- Collector Base Voltage (VCBO)
- 50V
- Emitter Base Voltage (VEBO)
- 6V
- hFE Min
- 110
- Max Junction Temperature (Tj)
- 150°C
- Ambient Temperature Range High
- 150°C
- Height
- 1.1mm
- Length
- 3mm
- Width
- 1.4mm
Download datasheets and manufacturer documentation for NEXPERIA BC847,215.
Datasheets:
PCN Design/Specification:
PCN Packaging:
RohsStatement:
BC847,215 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 110 @ 2mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 100mA volts.
BC847,215 Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
BC847,215 Applications
There are a lot of Nexperia USA Inc.
BC847,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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