NEXPERIA BCP53,115
NEXPERIA BCP53,115

NEXPERIA BCP53,115

Manufacturer No:

BCP53,115

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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BCP53,115 information

NEXPERIA BCP53,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BCP53,115.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Surface Mount
  • YES
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2001
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • HTS Code
  • 8541.29.00.75
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • Base Part Number
  • BCP53
  • Pin Count
  • 4
  • JESD-30 Code
  • R-PDSO-G4
  • Qualification Status
  • Not Qualified
  • Configuration
  • SINGLE
  • Case Connection
  • COLLECTOR
  • Power - Max
  • 1W
  • Transistor Application
  • SWITCHING
  • Polarity/Channel Type
  • PNP
  • Transistor Type
  • PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 63 @ 150mA 2V
  • Current - Collector Cutoff (Max)
  • 100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
  • 500mV @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max)
  • 80V
  • Current - Collector (Ic) (Max)
  • 1A
  • Transition Frequency
  • 145MHz
  • Frequency - Transition
  • 145MHz
  • Power Dissipation Ambient-Max
  • 1.5W
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA BCP53,115.

Datasheets:

PCN Design/Specification:

RohsStatement:

BCP53,115 Overview


In this device, the DC current gain is 63 @ 150mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 145MHz.There is a 80V maximal voltage in the device due to collector-emitter breakdown.

BCP53,115 Features


the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 145MHz


BCP53,115 Applications


There are a lot of Nexperia USA Inc.
BCP53,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

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