INFINEON BFG135AE6327
Manufacturer No:
BFG135AE6327
Manufacturer:
Package:
Description:
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon, NPN
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BFG135AE6327 information
INFINEON BFG135AE6327 technical specifications, attributes, parameters and parts with similar specifications to INFINEON BFG135AE6327.
- Type
- Parameter
- Mount
- Surface Mount
- Surface Mount
- YES
- Number of Pins
- 4
- Number of Terminals
- 4
- Transistor Element Material
- SILICON
- RoHS Status
- RoHS Compliant
- Package Shape
- RECTANGULAR
- Manufacturer
- Infineon Technologies AG
- Packaging
- Tape and Reel
- ECCN Code
- EAR99
- Max Operating Temperature
- 150 °C
- Min Operating Temperature
- -65 °C
- Subcategory
- Other Transistors
- Max Power Dissipation
- 1 W
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- compliant
- Frequency
- 6 GHz
- JESD-30 Code
- R-PDSO-G4
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Polarity
- NPN
- Configuration
- SINGLE
- Power Dissipation
- 1 W
- Case Connection
- COLLECTOR
- Transistor Application
- AMPLIFIER
- Gain Bandwidth Product
- 6 GHz
- Polarity/Channel Type
- NPN
- Collector Emitter Voltage (VCEO)
- 15 V
- Max Collector Current
- 150 mA
- Collector Emitter Breakdown Voltage
- 15 V
- Gain
- 14 dB
- Transition Frequency
- 6 GHz
- Collector Base Voltage (VCBO)
- 25 V
- Power Dissipation-Max (Abs)
- 1 W
- Emitter Base Voltage (VEBO)
- 2 V
- hFE Min
- 80
- Collector Current-Max (IC)
- 0.15 A
- DC Current Gain-Min (hFE)
- 80
- Collector-Emitter Voltage-Max
- 15 V
- Highest Frequency Band
- L BAND
- Collector-Base Capacitance-Max
- 1.8 pF
Download datasheets and manufacturer documentation for INFINEON BFG135AE6327.
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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