NEXPERIA BSH103,235

Manufacturer No:

BSH103,235

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

N-Channel Tape & Reel (TR) 400m Ω @ 500mA, 4.5V ±8V 83pF @ 24V 2.1nC @ 4.5V TO-236-3, SC-59, SOT-23-3

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BSH103,235 information

NEXPERIA BSH103,235 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSH103,235.

Type
Parameter

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
850mA Ta

Drive Voltage (Max Rds On, Min Rds On)
2.5V

Number of Elements
1

Power Dissipation (Max)
540mW Ta

Turn Off Delay Time
20 ns

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
1998

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

HTS Code
8541.21.00.75

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Pin Count
3

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
500mW

Turn On Delay Time
2.5 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
400m Ω @ 500mA, 4.5V

Vgs(th) (Max) @ Id
400mV @ 1mA (Min)

Input Capacitance (Ciss) (Max) @ Vds
83pF @ 24V

Gate Charge (Qg) (Max) @ Vgs
2.1nC @ 4.5V

Rise Time
3.5ns

Vgs (Max)
±8V

Fall Time (Typ)
3.5 ns

Continuous Drain Current (ID)
850mA

Gate to Source Voltage (Vgs)
8V

Max Dual Supply Voltage
30V

Drain Current-Max (Abs) (ID)
0.85A

Drain-source On Resistance-Max
0.5Ohm

Drain to Source Breakdown Voltage
30V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA BSH103,235.

BSH103,235 Overview

A device's maximum input capacitance is 83pF @ 24V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 850mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.Its drain current is 0.85A, and it is the maximum continuous current the device can conduct.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 2.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Powered by 30V, it supports maximum dual supply voltages.

BSH103,235 Features

a continuous drain current (ID) of 850mA
a drain-to-source breakdown voltage of 30V voltage

BSH103,235 Applications

There are a lot of Nexperia USA Inc.
BSH103,235 applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

User Guide

PURCHASE

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Step2：Desiccant Protection

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DELIVERY TIME

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2. For in-stock parts, orders normally could be shipped out within 1-2days.