NEXPERIA BSH203,215

Manufacturer No:

BSH203,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

P-Channel Tape & Reel (TR) 900m Ω @ 280mA, 4.5V ±8V 110pF @ 24V 2.2nC @ 4.5V TO-236-3, SC-59, SOT-23-3

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BSH203,215 information

NEXPERIA BSH203,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSH203,215.

Type
Parameter

Factory Lead Time
4 Weeks

Contact Plating
Tin

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Current - Continuous Drain (Id) @ 25℃
470mA Ta

Drive Voltage (Max Rds On, Min Rds On)
1.8V 4.5V

Number of Elements
1

Power Dissipation (Max)
417mW Ta

Turn Off Delay Time
45 ns

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
1997

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Termination
SMD/SMT

ECCN Code
EAR99

Resistance
900mOhm

Additional Feature
LOGIC LEVEL COMPATIBLE

Terminal Position
DUAL

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Pin Count
3

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
417mW

Turn On Delay Time
2 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
900m Ω @ 280mA, 4.5V

Vgs(th) (Max) @ Id
680mV @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
110pF @ 24V

Gate Charge (Qg) (Max) @ Vgs
2.2nC @ 4.5V

Rise Time
4.5ns

Vgs (Max)
±8V

Fall Time (Typ)
4.5 ns

Continuous Drain Current (ID)
-470mA

Threshold Voltage
-680mV

Gate to Source Voltage (Vgs)
8V

Max Dual Supply Voltage
-30V

Drain Current-Max (Abs) (ID)
0.47A

Drain to Source Breakdown Voltage
30V

Dual Supply Voltage
-30V

Download datasheets and manufacturer documentation for NEXPERIA BSH203,215.

BSH203,215 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 110pF @ 24V.This device has a continuous drain current (ID) of [-470mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.A device's drain current is its maximum continuous current, and this device's drain current is 0.47A.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by -30V.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -680mV.

BSH203,215 Features

a continuous drain current (ID) of -470mA
a drain-to-source breakdown voltage of 30V voltage
a threshold voltage of -680mV

BSH203,215 Applications

There are a lot of Nexperia USA Inc.
BSH203,215 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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