NEXPERIA BSS84,215

Manufacturer No:

BSS84,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 10 ? @ 130mA, 10V ±20V 45pF @ 25V 50V TO-236-3, SC-59, SOT-23-3

Quantity:

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BSS84,215 information

NEXPERIA BSS84,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BSS84,215.

Type
Parameter

Factory Lead Time
4 Weeks

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-65°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
2008

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

Additional Feature
LOGIC LEVEL COMPATIBLE

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Pin Count
3

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Number of Channels
1

Power Dissipation-Max
250mW Tc

Power Dissipation
250mW

Turn On Delay Time
3 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
10 ? @ 130mA, 10V

Vgs(th) (Max) @ Id
2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
45pF @ 25V

Current - Continuous Drain (Id) @ 25°C
130mA Ta

Drain to Source Voltage (Vdss)
50V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Turn-Off Delay Time
7 ns

Continuous Drain Current (ID)
-130mA

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
-50V

Max Junction Temperature (Tj)
150°C

Height
1.1mm

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA BSS84,215.

BSS84,215 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 45pF @ 25V.This device has a continuous drain current (ID) of [-130mA], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-50V, the drain-source breakdown voltage is -50V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 7 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 3 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 50V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

BSS84,215 Features

a continuous drain current (ID) of -130mA
a drain-to-source breakdown voltage of -50V voltage
the turn-off delay time is 7 ns
a 50V drain to source voltage (Vdss)

BSS84,215 Applications

There are a lot of Nexperia USA Inc.
BSS84,215 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

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