NEXPERIA BUK7608-55A,118

Manufacturer No:

BUK7608-55A,118

Manufacturer:

NEXPERIA

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 8m ? @ 25A, 10V ±20V 4352pF @ 25V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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BUK7608-55A,118 information

NEXPERIA BUK7608-55A,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK7608-55A,118.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount
YES

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Series
Automotive, AEC-Q101, TrenchMOS?

Published
2010

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

HTS Code
8541.29.00.75

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Reach Compliance Code
not_compliant

Time@Peak Reflow Temperature-Max (s)
40

Pin Count
3

Qualification Status
Not Qualified

Number of Elements
1

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
254W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
8m ? @ 25A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
4352pF @ 25V

Current - Continuous Drain (Id) @ 25°C
75A Tc

Drain to Source Voltage (Vdss)
55V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Continuous Drain Current (ID)
75A

Drain-source On Resistance-Max
0.008Ohm

Pulsed Drain Current-Max (IDM)
504A

DS Breakdown Voltage-Min
55V

Avalanche Energy Rating (Eas)
670 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA BUK7608-55A,118.

BUK7608-55A,118 Overview

In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 670 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4352pF @ 25V.This device conducts a continuous drain current (ID) of 75A, which is the maximum continuous current transistor can conduct.Pulsed drain current is maximum rated peak drain current 504A.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

BUK7608-55A,118 Features

the avalanche energy rating (Eas) is 670 mJ
a continuous drain current (ID) of 75A
based on its rated peak drain current 504A.
a 55V drain to source voltage (Vdss)

BUK7608-55A,118 Applications

There are a lot of Nexperia USA Inc.
BUK7608-55A,118 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

User Guide

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