NEXPERIA BUK764R0-55B,118
Manufacturer No:
BUK764R0-55B,118
Manufacturer:
Package:
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Description:
N-Channel Tape & Reel (TR) 4m Ω @ 25A, 10V ±20V 6776pF @ 25V 86nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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BUK764R0-55B,118 information
NEXPERIA BUK764R0-55B,118 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK764R0-55B,118.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount
- YES
- Number of Pins
- 3
- Weight
- 4.535924g
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 75A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 300W Tc
- Turn Off Delay Time
- 71 ns
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Published
- 2011
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 2
- ECCN Code
- EAR99
- Terminal Form
- GULL WING
- Pin Count
- 3
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 300W
- Case Connection
- DRAIN
- Turn On Delay Time
- 23 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 4m Ω @ 25A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 6776pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 86nC @ 10V
- Rise Time
- 51ns
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 41 ns
- Continuous Drain Current (ID)
- 75A
- Gate to Source Voltage (Vgs)
- 20V
- Max Dual Supply Voltage
- 55V
- Drain-source On Resistance-Max
- 0.004Ohm
- Drain to Source Breakdown Voltage
- 55V
- Pulsed Drain Current-Max (IDM)
- 774A
- Height
- 6.35mm
- Length
- 6.35mm
- Width
- 6.35mm
Download datasheets and manufacturer documentation for NEXPERIA BUK764R0-55B,118.
PCN Packaging:
ReachStatement:
BUK764R0-55B,118 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6776pF @ 25V.This device has a continuous drain current (ID) of [75A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=55V, the drain-source breakdown voltage is 55V.A maximum pulsed drain current of 774A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 55V.
BUK764R0-55B,118 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 55V voltage
based on its rated peak drain current 774A.
BUK764R0-55B,118 Applications
There are a lot of Nexperia USA Inc.
BUK764R0-55B,118 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
User Guide
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