

NEXPERIA BUK7Y12-100EX
Manufacturer No:
BUK7Y12-100EX
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 12m ? @ 25A, 10V ±20V 5067pF @ 25V 68nC @ 10V SC-100, SOT-669
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BUK7Y12-100EX information
NEXPERIA BUK7Y12-100EX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK7Y12-100EX.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS?
- Published
- 2013
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Terminal Finish
- Tin (Sn)
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- 30
- Pin Count
- 4
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 238W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 238W
- Case Connection
- DRAIN
- Turn On Delay Time
- 12 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 12m ? @ 25A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 5067pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 85A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 68nC @ 10V
- Rise Time
- 18ns
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 66 ns
- Turn-Off Delay Time
- 66 ns
- Continuous Drain Current (ID)
- 85A
- JEDEC-95 Code
- MO-235
- Gate to Source Voltage (Vgs)
- 20V
- Max Dual Supply Voltage
- 100V
- Drain to Source Breakdown Voltage
- 100V
Download datasheets and manufacturer documentation for NEXPERIA BUK7Y12-100EX.
Datasheets:
PCN Packaging:
ReachStatement:
BUK7Y12-100EX Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 5067pF @ 25V.This device conducts a continuous drain current (ID) of 85A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 66 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 339A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 100V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
BUK7Y12-100EX Features
a continuous drain current (ID) of 85A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 339A.
BUK7Y12-100EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y12-100EX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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