

NEXPERIA BUK7Y9R9-80EX
Manufacturer No:
BUK7Y9R9-80EX
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 98m ? @ 5A, 10V ±20V 498pF @ 25V 51.6nC @ 10V SC-100, SOT-669
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BUK7Y9R9-80EX information
NEXPERIA BUK7Y9R9-80EX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK7Y9R9-80EX.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS?
- Published
- 2013
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Pin Count
- 4
- Number of Elements
- 1
- Number of Channels
- 1
- Power Dissipation-Max
- 195W Tc
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 195W
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 98m ? @ 5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 498pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 89A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 51.6nC @ 10V
- Rise Time
- 23ns
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 21 ns
- Turn-Off Delay Time
- 34 ns
- Continuous Drain Current (ID)
- 89A
- JEDEC-95 Code
- MO-235
- Gate to Source Voltage (Vgs)
- 20V
- Max Dual Supply Voltage
- 80V
- Drain-source On Resistance-Max
- 0.0099Ohm
- Drain to Source Breakdown Voltage
- 80V
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NEXPERIA BUK7Y9R9-80EX.
PCN Packaging:
RohsStatement:
BUK7Y9R9-80EX Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 498pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 80V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 80V.As a result of its turn-off delay time, which is 34 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 15 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 80V.In addition to reducing power consumption, this device uses drive voltage (10V).
BUK7Y9R9-80EX Features
a continuous drain current (ID) of 89A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 34 ns
BUK7Y9R9-80EX Applications
There are a lot of Nexperia USA Inc.
BUK7Y9R9-80EX applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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