

NEXPERIA BUK9M23-80EX
Manufacturer No:
BUK9M23-80EX
Manufacturer:
Package:
SOT-1210, 8-LFPAK33
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 20m ? @ 10A, 10V ±10V 2808pF @ 25V 20nC @ 5V 80V SOT-1210, 8-LFPAK33
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BUK9M23-80EX information
NEXPERIA BUK9M23-80EX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK9M23-80EX.
- Type
- Parameter
- Factory Lead Time
- 26 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SOT-1210, 8-LFPAK33
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS?
- Published
- 2016
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 8
- Reference Standard
- AEC-Q101; IEC-60134
- JESD-30 Code
- R-PSSO-G4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 79W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 20m ? @ 10A, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 2808pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 37A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 5V
- Drain to Source Voltage (Vdss)
- 80V
- Drive Voltage (Max Rds On,Min Rds On)
- 5V
- Vgs (Max)
- ±10V
- Continuous Drain Current (ID)
- 37A
- Drain-source On Resistance-Max
- 0.023Ohm
- Pulsed Drain Current-Max (IDM)
- 148A
- DS Breakdown Voltage-Min
- 80V
- Avalanche Energy Rating (Eas)
- 55.4 mJ
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NEXPERIA BUK9M23-80EX.
Datasheets:
PCN Packaging:
RohsStatement:
BUK9M23-80EX Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 55.4 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2808pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 37A continuous drain current (ID).Peak drain current is 148A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 80V.For this transistor to work, a voltage 80V is required between drain and source (Vdss).Using drive voltage (5V), this device contributes to a reduction in overall power consumption.
BUK9M23-80EX Features
the avalanche energy rating (Eas) is 55.4 mJ
a continuous drain current (ID) of 37A
based on its rated peak drain current 148A.
a 80V drain to source voltage (Vdss)
BUK9M23-80EX Applications
There are a lot of Nexperia USA Inc.
BUK9M23-80EX applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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BUK9M23-80EX Relevant information
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