

NEXPERIA BUK9Y19-55B,115
Manufacturer No:
BUK9Y19-55B,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
N-Channel Tape & Reel (TR) 17.3m Ω @ 20A, 10V ±15V 1992pF @ 25V 18nC @ 5V SC-100, SOT-669
Quantity:
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In Stock :Available
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BUK9Y19-55B,115 information
NEXPERIA BUK9Y19-55B,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK9Y19-55B,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Contact Plating
- Tin
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 46A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Number of Elements
- 1
- Power Dissipation (Max)
- 85W Tc
- Turn Off Delay Time
- 44 ns
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Published
- 2008
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Time@Peak Reflow Temperature-Max (s)
- 30
- Pin Count
- 4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 85W
- Case Connection
- DRAIN
- Turn On Delay Time
- 18 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 17.3m Ω @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1992pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 18nC @ 5V
- Rise Time
- 180ns
- Vgs (Max)
- ±15V
- Fall Time (Typ)
- 134 ns
- Continuous Drain Current (ID)
- 46A
- Gate to Source Voltage (Vgs)
- 15V
- Max Dual Supply Voltage
- 55V
- Drain to Source Breakdown Voltage
- 55V
- Avalanche Energy Rating (Eas)
- 80 mJ
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NEXPERIA BUK9Y19-55B,115.
Datasheets:
PCN Packaging:
RohsStatement:
BUK9Y19-55B,115 Overview
An avalanche break down occurs, and the applied energy is called avalanche energy, with a rating of 80 mJ Avalanche energy.An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1992pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 46A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 55V, and this device has a drainage-to-source breakdown voltage of 55VV.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 18 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 15V to 1.In addition to 55V, it supports dual voltages up to the maximum.
BUK9Y19-55B,115 Features
the avalanche energy rating (Eas) is 80 mJ
a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 55V voltage
BUK9Y19-55B,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y19-55B,115 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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