

NEXPERIA BUK9Y8R7-60E,115
Manufacturer No:
BUK9Y8R7-60E,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 7.5m ? @ 20A, 10V ±10V 4570pF @ 25V 31nC @ 5V SC-100, SOT-669
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BUK9Y8R7-60E,115 information
NEXPERIA BUK9Y8R7-60E,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA BUK9Y8R7-60E,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Material
- Brass, Bronze
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101, TrenchMOS?
- Published
- 2013
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Termination
- Crimp
- Terminal Finish
- Tin (Sn)
- Additional Feature
- AVALANCHE RATED
- Technology
- MOSFET (Metal Oxide)
- Terminal Form
- GULL WING
- Reach Compliance Code
- not_compliant
- Pin Count
- 4
- Number of Elements
- 1
- Plating
- Gold, Tin
- Power Dissipation-Max
- 147W Tc
- Wire Gauge (Max)
- 24 AWG
- Wire Gauge (Min)
- 20 AWG
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 147W
- Case Connection
- DRAIN
- Turn On Delay Time
- 17 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 7.5m ? @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2.1V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 4570pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 86A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 31nC @ 5V
- Rise Time
- 30ns
- Drive Voltage (Max Rds On,Min Rds On)
- 5V 10V
- Vgs (Max)
- ±10V
- Fall Time (Typ)
- 26 ns
- Turn-Off Delay Time
- 42 ns
- Continuous Drain Current (ID)
- 86A
- JEDEC-95 Code
- MO-235
- Gate to Source Voltage (Vgs)
- 10V
- Max Dual Supply Voltage
- 60V
- Drain-source On Resistance-Max
- 0.0087Ohm
Download datasheets and manufacturer documentation for NEXPERIA BUK9Y8R7-60E,115.
PCN Packaging:
RohsStatement:
BUK9Y8R7-60E,115 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 76.5 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4570pF @ 25V.This device has a continuous drain current (ID) of [86A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 60V.Its overall power consumption can be reduced by using drive voltage (5V 10V).
BUK9Y8R7-60E,115 Features
the avalanche energy rating (Eas) is 76.5 mJ
a continuous drain current (ID) of 86A
the turn-off delay time is 42 ns
BUK9Y8R7-60E,115 Applications
There are a lot of Nexperia USA Inc.
BUK9Y8R7-60E,115 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
User Guide
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