TI CSD19505KCS

Manufacturer No:

CSD19505KCS

Manufacturer:

Package:

TO-220-3

Description:

MOSFET N-CH 80V 150A TO220-3.N-Channel 80 V 150A (Ta) 300W (Tc) Through Hole TO-220-3

Quantity:

Delivery:

Payment:

In Stock :Available

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CSD19505KCS information

TI CSD19505KCS technical specifications, attributes, parameters and parts with similar specifications to TI CSD19505KCS.

Type
Parameter

Category
Discrete Semiconductor Products

Manufacturer
Texas Instruments

Series
NexFET™

Packaging
Tube

Part Status
Active

Manufacturer Lead Time
6 Weeks

Current - Continuous Drain (Id) @ 25°C
150A (Ta)

Drain to Source Voltage (Vdss)
80 V

Drive Voltage (Max Rds On, Min Rds On)
6V, 10V

FET Feature
-

FET Type
N-Channel

Gate Charge (Qg) (Max) @ Vgs
76 nC @ 10 V

Grade
-

Input Capacitance (Ciss) (Max) @ Vds
7820 pF @ 40 V

Mounting Type
Through Hole

Operating Temperature
-55°C ~ 175°C (TJ)

Package / Case
TO-220-3

Power Dissipation (Max)
300W (Tc)

Qualification
-

Rds On (Max) @ Id, Vgs
3.8mOhm @ 100A, 6V

Supplier Device Package
TO-220-3

Technology
MOSFET (Metal Oxide)

Vgs (Max)
±20V

Vgs(th) (Max) @ Id
3.2V @ 250µA

HtsusCode
8541.29.0095

MoistureSensitivityLevel
Not Applicable

ReachStatus
REACH Unaffected

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for TI CSD19505KCS.

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DELIVERY TIME

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