TI CSD23203WT

Manufacturer No:

CSD23203WT

Manufacturer:

Package:

6-UFBGA, DSBGA

Description:

MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 19.4m ? @ 1.5A, 4.5V 914pF @ 4V 6.3nC @ 4.5V 8V 6-UFBGA, DSBGA

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CSD23203WT information

TI CSD23203WT technical specifications, attributes, parameters and parts with similar specifications to TI CSD23203WT.

Type
Parameter

Lifecycle Status
ACTIVE (Last Updated: 5 days ago)

Factory Lead Time
6 Weeks

Contact Plating
Copper, Silver, Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
6-UFBGA, DSBGA

Number of Pins
6

Weight
1.700971mg

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
NexFET?

JESD-609 Code
e1

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
6

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)

Technology
MOSFET (Metal Oxide)

Terminal Position
BOTTOM

Terminal Form
BALL

Base Part Number
CSD23203

Number of Elements
1

Power Dissipation-Max
750mW Ta

Operating Mode
ENHANCEMENT MODE

Turn On Delay Time
14 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
19.4m ? @ 1.5A, 4.5V

Vgs(th) (Max) @ Id
1.1V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
914pF @ 4V

Current - Continuous Drain (Id) @ 25°C
3A Ta

Gate Charge (Qg) (Max) @ Vgs
6.3nC @ 4.5V

Rise Time
12ns

Drain to Source Voltage (Vdss)
8V

Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V

Fall Time (Typ)
27 ns

Turn-Off Delay Time
58 ns

Continuous Drain Current (ID)
3A

Threshold Voltage
-800mV

Gate to Source Voltage (Vgs)
-6V

Drain Current-Max (Abs) (ID)
3A

Drain-source On Resistance-Max
0.053Ohm

Drain to Source Breakdown Voltage
-8V

Feedback Cap-Max (Crss)
172 pF

Height
1mm

Length
1.5mm

Download datasheets and manufacturer documentation for TI CSD23203WT.

CSD23203WT Overview

A device's maximum input capacitance is 914pF @ 4V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-8V, and this device has a drain-to-source breakdown voltage of -8V voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 58 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is -6V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -800mV.To operate this transistor, you need to apply a 8V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

CSD23203WT Features

a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 58 ns
a threshold voltage of -800mV
a 8V drain to source voltage (Vdss)

CSD23203WT Applications

There are a lot of Texas Instruments
CSD23203WT applications of single MOSFETs transistors.

Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters

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