Microchip DN2625DK6-G

Manufacturer No:

DN2625DK6-G

Manufacturer:

Microchip

Package:

8-VDFN Exposed Pad

Description:

MOSFET, DEPLETION-MODE, 250V, 3.5 Ohm

Quantity:

Delivery:

Payment:

In Stock :Available

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DN2625DK6-G information

Microchip DN2625DK6-G technical specifications, attributes, parameters and parts with similar specifications to Microchip DN2625DK6-G.

Type
Parameter

BVdss min (V)
250

Rds (on) max (Ohms)
3.5

Vgs(off) Min V (volt)
-1.5

Vgs(off) Max V (volt)
-2.1

Package
DFN-8, TO-252

Download datasheets and manufacturer documentation for Microchip DN2625DK6-G.

Data Sheets:

df86965182a42367f2286be1494d0de4.pdf

Application Notes:

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54c9921375a71966856c9a1ae130b1e1.pdf

DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, but may continue to be purchased for existing designs.

Very low gate threshold voltage
Designed to be source-driven
Low switching losses
Low effective output capacitance
Designed for inductive loads
Well matched for low second harmonic when driven by MD2130

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