

DIODES FMMT551TA
Manufacturer No:
FMMT551TA
Manufacturer:
Package:
TO-236-3, SC-59, SOT-23-3
Description:
PNP -55°C~200°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
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FMMT551TA information
DIODES FMMT551TA technical specifications, attributes, parameters and parts with similar specifications to DIODES FMMT551TA.
- Type
- Parameter
- Factory Lead Time
- 15 Weeks
- Contact Plating
- Tin
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Number of Pins
- 3
- Weight
- 7.994566mg
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~200°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2006
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Voltage - Rated DC
- -60V
- Max Power Dissipation
- 500mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Current Rating
- -1A
- Frequency
- 150MHz
- Base Part Number
- FMMT551
- Pin Count
- 3
- Number of Elements
- 1
- Element Configuration
- Single
- Power Dissipation
- 500mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 150MHz
- Polarity/Channel Type
- PNP
- Transistor Type
- PNP
- Collector Emitter Voltage (VCEO)
- 60V
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 50 @ 150mA 10V
- Current - Collector Cutoff (Max)
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 350mV @ 15mA, 150mA
- Collector Emitter Breakdown Voltage
- 60V
- Transition Frequency
- 150MHz
- Collector Emitter Saturation Voltage
- -350mV
- Max Breakdown Voltage
- 60V
- Collector Base Voltage (VCBO)
- 80V
- Emitter Base Voltage (VEBO)
- 5V
- Continuous Collector Current
- -1A
- Height
- 1.1mm
- Length
- 3mm
Download datasheets and manufacturer documentation for DIODES FMMT551TA.
Datasheets:
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PCN Assembly/Origin:
FMMT551TA Overview
DC current gain in this device equals 50 @ 150mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -350mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 350mV @ 15mA, 150mA.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.
FMMT551TA Features
the DC current gain for this device is 50 @ 150mA 10V
a collector emitter saturation voltage of -350mV
the vce saturation(Max) is 350mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 150MHz
FMMT551TA Applications
There are a lot of Diodes Incorporated
FMMT551TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
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