

INFINEON IPC100N04S52R8ATMA1
Manufacturer No:
IPC100N04S52R8ATMA1
Manufacturer:
Package:
8-PowerTDFN
Description:
N-Channel Tape & Reel (TR) 2.8m Ω @ 50A, 10V ±20V 2600pF @ 25V 45nC @ 10V 40V 8-PowerTDFN
Quantity:
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IPC100N04S52R8ATMA1 information
INFINEON IPC100N04S52R8ATMA1 technical specifications, attributes, parameters and parts with similar specifications to INFINEON IPC100N04S52R8ATMA1.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 100A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 7V 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 75W Tc
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS™
- Published
- 2016
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Terminal Position
- DUAL
- Terminal Form
- FLAT
- Peak Reflow Temperature (Cel)
- NOT SPECIFIED
- Reach Compliance Code
- not_compliant
- Time@Peak Reflow Temperature-Max (s)
- NOT SPECIFIED
- JESD-30 Code
- R-PDSO-F3
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 2.8m Ω @ 50A, 10V
- Vgs(th) (Max) @ Id
- 3.4V @ 30μA
- Input Capacitance (Ciss) (Max) @ Vds
- 2600pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs
- 45nC @ 10V
- Drain to Source Voltage (Vdss)
- 40V
- Vgs (Max)
- ±20V
- Drain Current-Max (Abs) (ID)
- 100A
- Drain-source On Resistance-Max
- 0.0034Ohm
- Pulsed Drain Current-Max (IDM)
- 400A
- DS Breakdown Voltage-Min
- 40V
- Avalanche Energy Rating (Eas)
- 66 mJ
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for INFINEON IPC100N04S52R8ATMA1.
PCN Packaging:
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IPC100N04S52R8ATMA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 66 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2600pF @ 25V maximal input capacitance.A device can conduct a maximum continuous current of [100A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 400A.The DS breakdown voltage should be maintained above 40V to maintain normal operation.To operate this transistor, you will need a 40V drain to source voltage (Vdss).
IPC100N04S52R8ATMA1 Features
the avalanche energy rating (Eas) is 66 mJ
based on its rated peak drain current 400A.
a 40V drain to source voltage (Vdss)
IPC100N04S52R8ATMA1 Applications
There are a lot of Infineon Technologies
IPC100N04S52R8ATMA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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