

INFINEON IRF7495PBF
Manufacturer No:
IRF7495PBF
Manufacturer:
Package:
8-SOIC (0.154, 3.90mm Width)
Description:
MOSFET (Metal Oxide) N-Channel Tube 22m ? @ 4.4A, 10V ±20V 1530pF @ 25V 51nC @ 10V 100V 8-SOIC (0.154, 3.90mm Width)
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IRF7495PBF information
INFINEON IRF7495PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7495PBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Surface Mount
- YES
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HEXFET®
- Published
- 2003
- JESD-609 Code
- e3
- Part Status
- Discontinued
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 8
- ECCN Code
- EAR99
- Terminal Finish
- Matte Tin (Sn)
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Time@Peak Reflow Temperature-Max (s)
- 30
- JESD-30 Code
- R-PDSO-G8
- Qualification Status
- Not Qualified
- Number of Elements
- 1
- Power Dissipation-Max
- 2.5W Ta
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 22m ? @ 4.4A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 1530pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 7.3A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 51nC @ 10V
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- JEDEC-95 Code
- MS-012AA
- Drain Current-Max (Abs) (ID)
- 7.3A
- Drain-source On Resistance-Max
- 0.022Ohm
- Pulsed Drain Current-Max (IDM)
- 58A
- DS Breakdown Voltage-Min
- 100V
- Avalanche Energy Rating (Eas)
- 180 mJ
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for INFINEON IRF7495PBF.
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IRF7495PBF Description
IRF7495PBF is an N-channel IGBT power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 100V. The operating temperature of IRF7495PBF is -55°C~150°C TJ and its maximum power dissipation are 2.5W Ta. IRF7495PBF has 8 pins and it is available in Tube packaging way. The FET Type of IRF7495PBF is N-channel and its Reverse Recovery Time is 70 ns.
IRF7495PBF Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective Coss to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7495PBF Applications
High-frequency DC-DC converters
Lead-Free
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.
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