

INFINEON IRF7769L1TRPBF
Manufacturer No:
IRF7769L1TRPBF
Manufacturer:
Package:
DirectFET? Isometric L8
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 3.5m ? @ 74A, 10V ±20V 11560pF @ 25V 300nC @ 10V 100V DirectFET? Isometric L8
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In Stock :Available
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IRF7769L1TRPBF information
INFINEON IRF7769L1TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF7769L1TRPBF.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- DirectFET? Isometric L8
- Number of Pins
- 15
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 9
- ECCN Code
- EAR99
- Subcategory
- FET General Purpose Power
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- BOTTOM
- JESD-30 Code
- R-XBCC-N3
- Number of Elements
- 1
- Configuration
- Single
- Power Dissipation-Max
- 3.3W Ta 125W Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 3.3W
- Case Connection
- DRAIN
- Turn On Delay Time
- 44 ns
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 3.5m ? @ 74A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 11560pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 20A Ta 124A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 300nC @ 10V
- Rise Time
- 32ns
- Drain to Source Voltage (Vdss)
- 100V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 41 ns
- Turn-Off Delay Time
- 92 ns
- Continuous Drain Current (ID)
- 124A
- Gate to Source Voltage (Vgs)
- 20V
- Drain Current-Max (Abs) (ID)
- 375A
- Drain-source On Resistance-Max
- 0.0035Ohm
- Pulsed Drain Current-Max (IDM)
- 500A
- Avalanche Energy Rating (Eas)
- 260 mJ
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for INFINEON IRF7769L1TRPBF.
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PCN Packaging:
ConflictMineralStatement:
IRF7769L1TRPBF belongs to the family of power MOSFETs that are designed based on the latest HEXFET? Power MOSFET Silicon technology and the advanced DirectFETTM packaging. Both of them enable the IRF7769L1TRPBF to make possible the lowest on-state resistance in a package that has a footprint smaller than a D2PAK. The DirectFET? package is compatible with existing surface mount techniques and allows dual sided cooling to maximize thermal transfer in power systems.
IRF7769L1TRPBF Features
DirectFET? package
Reduced total losses
System reliability improvements
High level of thermal performance
High efficiency and low temperatures
HEXFET? Power MOSFET Silicon technology
IRF7769L1TRPBF Applications
High-frequency switching applications
Synchronous rectification applications
High-performance isolated converter
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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RFQ (REQUEST FOR QUOTATIONS)Please ensure the part numbers and quantities are accurate and complete when submitting your RFQ.
Provide target prices and acceptable alternatives, if any, to speed up the quotation process.
Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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