INFINEON IRF9540NLPBF

Manufacturer No:

IRF9540NLPBF

Manufacturer:

INFINEON

Package:

TO-262-3 Long Leads, I2Pak, TO-262AA

Description:

MOSFET (Metal Oxide) P-Channel Tube 117m ? @ 14A, 10V ±20V 1450pF @ 25V 110nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

Quantity:

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IRF9540NLPBF information

INFINEON IRF9540NLPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRF9540NLPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
HEXFET®

Published
2005

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

Termination
Through Hole

ECCN Code
EAR99

Resistance
117mOhm

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Number of Elements
1

Power Dissipation-Max
3.1W Ta 110W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
3.1W

Case Connection
DRAIN

Turn On Delay Time
13 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
117m ? @ 14A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1450pF @ 25V

Current - Continuous Drain (Id) @ 25°C
23A Tc

Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V

Rise Time
67ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
51 ns

Turn-Off Delay Time
40 ns

Continuous Drain Current (ID)
-23A

Threshold Voltage
4V

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
-100V

Pulsed Drain Current-Max (IDM)
92A

Download datasheets and manufacturer documentation for INFINEON IRF9540NLPBF.

IRF9540NLPBF Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 84 mJ.A device's maximal input capacitance is 1450pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -23A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 40 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 92A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

IRF9540NLPBF Features

the avalanche energy rating (Eas) is 84 mJ
a continuous drain current (ID) of -23A
a drain-to-source breakdown voltage of -100V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 92A.
a threshold voltage of 4V

IRF9540NLPBF Applications

There are a lot of Infineon Technologies
IRF9540NLPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

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