INFINEON IRFB7430PBF

Manufacturer No:

IRFB7430PBF

Manufacturer:

INFINEON

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 1.3m ? @ 100A, 10V ±20V 14240pF @ 25V 460nC @ 10V TO-220-3

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IRFB7430PBF information

INFINEON IRFB7430PBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFB7430PBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-220-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®, StrongIRFET?

Published
2008

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Power Dissipation-Max
375W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
375W

Case Connection
DRAIN

Turn On Delay Time
32 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.3m ? @ 100A, 10V

Vgs(th) (Max) @ Id
3.9V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
14240pF @ 25V

Current - Continuous Drain (Id) @ 25°C
195A Tc

Gate Charge (Qg) (Max) @ Vgs
460nC @ 10V

Rise Time
105ns

Drive Voltage (Max Rds On,Min Rds On)
6V 10V

Vgs (Max)
±20V

Fall Time (Typ)
100 ns

Turn-Off Delay Time
160 ns

Continuous Drain Current (ID)
195A

Threshold Voltage
2.2V

JEDEC-95 Code
TO-220AB

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
40V

Avalanche Energy Rating (Eas)
760 mJ

Recovery Time
52 ns

Height
16.51mm

Length
10.67mm

Width
4.83mm

REACH SVHC
No SVHC

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for INFINEON IRFB7430PBF.

IRFB7430PBF Overview

Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 760 mJ.A device's maximal input capacitance is 14240pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 195A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 160 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 32 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 2.2V threshold voltage.This device reduces its overall power consumption by using drive voltage (6V 10V).

IRFB7430PBF Features

the avalanche energy rating (Eas) is 760 mJ
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 160 ns
a threshold voltage of 2.2V

IRFB7430PBF Applications

There are a lot of Infineon Technologies
IRFB7430PBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

User Guide

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