VISHAY IRFL014TRPBF

Manufacturer No:

IRFL014TRPBF

Manufacturer:

VISHAY

Package:

TO-261-4, TO-261AA

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 200mOhm @ 1.6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-261-4, TO-261AA

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IRFL014TRPBF information

VISHAY IRFL014TRPBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFL014TRPBF.

Type
Parameter

Factory Lead Time
8 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-261-4, TO-261AA

Number of Pins
4

Supplier Device Package
SOT-223

Weight
250.212891mg

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Published
1997

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Resistance
200mOhm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
2W Ta 3.1W Tc

Power Dissipation
2W

Turn On Delay Time
10 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
200mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Current - Continuous Drain (Id) @ 25°C
2.7A Tc

Gate Charge (Qg) (Max) @ Vgs
11nC @ 10V

Rise Time
50ns

Drain to Source Voltage (Vdss)
60V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
19 ns

Turn-Off Delay Time
13 ns

Continuous Drain Current (ID)
2.7A

Threshold Voltage
4V

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
60V

Input Capacitance
300pF

Drain to Source Resistance
200mOhm

Rds On Max
200 m?

Height
1.8mm

Length
6.7mm

Width
3.7mm

REACH SVHC
Unknown

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for VISHAY IRFL014TRPBF.

Datasheets:

vishaysiliconix-irfl014trpbf-datasheets-6038.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFL014TRPBF Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 300pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.As a result of its turn-off delay time, which is 13 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 200mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 60V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFL014TRPBF Features

a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)

IRFL014TRPBF Applications

There are a lot of Vishay Siliconix
IRFL014TRPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

User Guide

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