INFINEON IRFML8244TRPBF

Manufacturer No:

IRFML8244TRPBF

Manufacturer:

INFINEON

Package:

TO-236-3, SC-59, SOT-23-3

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 24m ? @ 5.8A, 10V ±20V 430pF @ 10V 5.4nC @ 10V TO-236-3, SC-59, SOT-23-3

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IRFML8244TRPBF information

INFINEON IRFML8244TRPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFML8244TRPBF.

Type
Parameter

Factory Lead Time
12 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-236-3, SC-59, SOT-23-3

Number of Pins
3

Transistor Element Material
SILICON

Manufacturer Package Identifier
Micro3

Operating Temperature
-55°C~150°C TJ

Packaging
Tape & Reel (TR)

Series
HEXFET®

Published
2008

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Resistance
41MOhm

Terminal Finish
Matte Tin (Sn)

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Power Dissipation-Max
1.25W Ta

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
1.25W

Turn On Delay Time
2.7 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
24m ? @ 5.8A, 10V

Vgs(th) (Max) @ Id
2.35V @ 10?A

Input Capacitance (Ciss) (Max) @ Vds
430pF @ 10V

Current - Continuous Drain (Id) @ 25°C
5.8A Ta

Gate Charge (Qg) (Max) @ Vgs
5.4nC @ 10V

Rise Time
2.1ns

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
2.9 ns

Turn-Off Delay Time
9 ns

Continuous Drain Current (ID)
5.8A

Threshold Voltage
1.7V

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
25V

Pulsed Drain Current-Max (IDM)
24A

Recovery Time
17 ns

Download datasheets and manufacturer documentation for INFINEON IRFML8244TRPBF.

IRFML8244TRPBF Overview

A device's maximal input capacitance is 430pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 5.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 25V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 9 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 24A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 2.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 1.7V threshold voltage.This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRFML8244TRPBF Features

a continuous drain current (ID) of 5.8A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 9 ns
based on its rated peak drain current 24A.
a threshold voltage of 1.7V

IRFML8244TRPBF Applications

There are a lot of Infineon Technologies
IRFML8244TRPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

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