ST IRFP460

Manufacturer No:

IRFP460

Manufacturer:

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 270m ? @ 9A, 10V ±30V 2980pF @ 25V 128nC @ 10V TO-247-3

Quantity:

Delivery:

Payment:

In Stock :Available

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IRFP460 information

ST IRFP460 technical specifications, attributes, parameters and parts with similar specifications to ST IRFP460.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Tube

Series
PowerMESH? II

JESD-609 Code
e0

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Lead (Sn/Pb)

Subcategory
FET General Purpose Power

Voltage - Rated DC
500V

Technology
MOSFET (Metal Oxide)

Current Rating
20A

Base Part Number
IRFP

Pin Count
3

JESD-30 Code
R-PSFM-T3

Number of Elements
1

Power Dissipation-Max
220W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Turn On Delay Time
29 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
270m ? @ 9A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
2980pF @ 25V

Current - Continuous Drain (Id) @ 25°C
18.4A Tc

Gate Charge (Qg) (Max) @ Vgs
128nC @ 10V

Rise Time
21ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Fall Time (Typ)
21 ns

Continuous Drain Current (ID)
30A

JEDEC-95 Code
TO-247AC

Gate to Source Voltage (Vgs)
30V

Drain Current-Max (Abs) (ID)
18.4A

Drain-source On Resistance-Max
0.27Ohm

Drain to Source Breakdown Voltage
500V

Pulsed Drain Current-Max (IDM)
73.6A

Avalanche Energy Rating (Eas)
960 mJ

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Contains Lead

Download datasheets and manufacturer documentation for ST IRFP460.

Datasheets:

stmicroelectronics-irfp460-datasheets-5313.pdf

IRFP460 Overview

There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 960 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2980pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 30A amps.In this device, the drain-source breakdown voltage is 500V and VGS=500V, so the drain-source breakdown voltage is 500V in this case.A device can conduct a maximum continuous current of [18.4A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 73.6A.A turn-on delay time of 29 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRFP460 Features

the avalanche energy rating (Eas) is 960 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 500V voltage
based on its rated peak drain current 73.6A.

IRFP460 Applications

There are a lot of STMicroelectronics
IRFP460 applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

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