VISHAY IRFP9240PBF

Manufacturer No:

IRFP9240PBF

Manufacturer:

VISHAY

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) P-Channel Tube 500mOhm @ 7.2A, 10V ±20V 1200pF @ 25V 44nC @ 10V 200V TO-247-3

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IRFP9240PBF information

VISHAY IRFP9240PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFP9240PBF.

Type
Parameter

Factory Lead Time
8 Weeks

Contact Plating
Tin

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Number of Pins
3

Supplier Device Package
TO-247-3

Weight
38.000013g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
1997

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Termination
Through Hole

Resistance
500mOhm

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Voltage - Rated DC
-200V

Technology
MOSFET (Metal Oxide)

Current Rating
-12A

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
150W Tc

Element Configuration
Single

Turn On Delay Time
14 ns

FET Type
P-Channel

Rds On (Max) @ Id, Vgs
500mOhm @ 7.2A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1200pF @ 25V

Current - Continuous Drain (Id) @ 25°C
12A Tc

Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V

Rise Time
43ns

Drain to Source Voltage (Vdss)
200V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
38 ns

Turn-Off Delay Time
39 ns

Continuous Drain Current (ID)
-12A

Threshold Voltage
-4V

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
-200V

Dual Supply Voltage
-200V

Input Capacitance
1.2nF

Recovery Time
300 ns

Max Junction Temperature (Tj)
150°C

Drain to Source Resistance
500mOhm

Rds On Max
500 m?

Download datasheets and manufacturer documentation for VISHAY IRFP9240PBF.

IRFP9240PBF Overview

A device's maximal input capacitance is 1200pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 39 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 500mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -4V threshold voltage.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRFP9240PBF Features

a continuous drain current (ID) of -12A
a drain-to-source breakdown voltage of -200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 500mOhm
a threshold voltage of -4V
a 200V drain to source voltage (Vdss)

IRFP9240PBF Applications

There are a lot of Vishay Siliconix
IRFP9240PBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

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