VISHAY IRFPS40N50L

Manufacturer No:

IRFPS40N50L

Manufacturer:

VISHAY

Package:

TO-274AA

Description:

MOSFET (Metal Oxide) N-Channel Tube 100mOhm @ 28A, 10V ±30V 8110pF @ 25V 380nC @ 10V 500V TO-274AA

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IRFPS40N50L information

VISHAY IRFPS40N50L technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFPS40N50L.

Type
Parameter

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-274AA

Number of Pins
3

Supplier Device Package
SUPER-247? (TO-274AA)

Weight
38.000013g

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Published
2017

Part Status
Obsolete

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Max Operating Temperature
150°C

Min Operating Temperature
-55°C

Technology
MOSFET (Metal Oxide)

Number of Channels
1

Power Dissipation-Max
540W Tc

Element Configuration
Single

Turn On Delay Time
27 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
100mOhm @ 28A, 10V

Vgs(th) (Max) @ Id
5V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
8110pF @ 25V

Current - Continuous Drain (Id) @ 25°C
46A Tc

Gate Charge (Qg) (Max) @ Vgs
380nC @ 10V

Drain to Source Voltage (Vdss)
500V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±30V

Fall Time (Typ)
69 ns

Turn-Off Delay Time
50 ns

Continuous Drain Current (ID)
46A

Gate to Source Voltage (Vgs)
30V

Drain to Source Breakdown Voltage
500V

Input Capacitance
8.11nF

Drain to Source Resistance
100mOhm

Rds On Max
100 m?

Height
20.8mm

Length
16.1mm

Width
5.3mm

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for VISHAY IRFPS40N50L.

Datasheets:

vishaysiliconix-irfps40n50l-datasheets-5766.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFPS40N50L Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8110pF @ 25V.This device has a continuous drain current (ID) of [46A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=500V, the drain-source breakdown voltage is 500V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.MOSFETs have 100mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 27 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 500V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRFPS40N50L Features

a continuous drain current (ID) of 46A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 100mOhm
a 500V drain to source voltage (Vdss)

IRFPS40N50L Applications

There are a lot of Vishay Siliconix
IRFPS40N50L applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

User Guide

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.