INFINEON IRFR2905ZPBF

Manufacturer No:

IRFR2905ZPBF

Manufacturer:

INFINEON

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Description:

MOSFET (Metal Oxide) N-Channel Tube 14.5m ? @ 36A, 10V ±20V 1380pF @ 25V 44nC @ 10V 55V TO-252-3, DPak (2 Leads + Tab), SC-63

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IRFR2905ZPBF information

INFINEON IRFR2905ZPBF technical specifications, attributes, parameters and parts with similar specifications to INFINEON IRFR2905ZPBF.

Type
Parameter

Mounting Type
Surface Mount

Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63

Surface Mount
YES

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tube

Series
HEXFET®

Published
2003

JESD-609 Code
e3

Part Status
Discontinued

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
2

ECCN Code
EAR99

Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Subcategory
FET General Purpose Power

Technology
MOSFET (Metal Oxide)

Terminal Position
SINGLE

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Reach Compliance Code
not_compliant

Time@Peak Reflow Temperature-Max (s)
30

JESD-30 Code
R-PSSO-G2

Qualification Status
Not Qualified

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
110W Tc

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
14.5m ? @ 36A, 10V

Vgs(th) (Max) @ Id
4V @ 250?A

Input Capacitance (Ciss) (Max) @ Vds
1380pF @ 25V

Current - Continuous Drain (Id) @ 25°C
42A Tc

Gate Charge (Qg) (Max) @ Vgs
44nC @ 10V

Drain to Source Voltage (Vdss)
55V

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

JEDEC-95 Code
TO-252AA

Drain Current-Max (Abs) (ID)
42A

Drain-source On Resistance-Max
0.0145Ohm

Pulsed Drain Current-Max (IDM)
240A

DS Breakdown Voltage-Min
55V

Avalanche Energy Rating (Eas)
82 mJ

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for INFINEON IRFR2905ZPBF.

IRFR2905ZPBF Overview

Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 82 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1380pF @ 25V.42A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 240A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 55V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IRFR2905ZPBF Features

the avalanche energy rating (Eas) is 82 mJ
based on its rated peak drain current 240A.
a 55V drain to source voltage (Vdss)

IRFR2905ZPBF Applications

There are a lot of Infineon Technologies
IRFR2905ZPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

User Guide

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