VISHAY IRFR320PBF

Manufacturer No:

IRFR320PBF

Manufacturer:

VISHAY

Package:

ROHS COMPLIANT, DPAK-3

Description:

Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

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IRFR320PBF information

VISHAY IRFR320PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR320PBF.

Type
Parameter

Pbfree Code
Yes

RoHS Status
RoHS Compliant

Part Life Cycle Code
Transferred

Ihs Manufacturer
VISHAY SILICONIX

Part Package Code
TO-252

Package Description
ROHS COMPLIANT, DPAK-3

Pin Count
3

Reach Compliance Code
compliant

ECCN Code
EAR99

Samacsys Manufacturer
Vishay

Additional Feature
AVALANCHE RATED

Avalanche Energy Rating (Eas)
160 mJ

Case Connection
DRAIN

Configuration
SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min
400 V

Drain Current-Max (ID)
3.1 A

Drain-source On Resistance-Max
1.8 Ω

FET Technology
METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code
TO-252

JESD-30 Code
R-PSSO-G2

Number of Elements
1

Number of Terminals
2

Operating Mode
ENHANCEMENT MODE

Operating Temperature-Max
150 °C

Package Shape
RECTANGULAR

Package Style
SMALL OUTLINE

Peak Reflow Temperature (Cel)
260

Polarity/Channel Type
N-CHANNEL

Pulsed Drain Current-Max (IDM)
12 A

Qualification Status
Not Qualified

Surface Mount
YES

Terminal Form
GULL WING

Terminal Position
SINGLE

Time@Peak Reflow Temperature-Max (s)
40

Transistor Application
SWITCHING

Transistor Element Material
SILICON

Download datasheets and manufacturer documentation for VISHAY IRFR320PBF.

Datasheets:

vishaysiliconix-irfu320pbf-datasheets-8190.pdf

RohsStatement:

vishaydale-imc0402rk47nj-rohsstatement-4552.pdf

IRFR320PBF Overview

An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 350pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 3.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 1.8Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRFR320PBF Features

a continuous drain current (ID) of 3.1A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)

IRFR320PBF Applications

There are a lot of Vishay Siliconix
IRFR320PBF applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

User Guide

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.