

VISHAY IRFR9024PBF
Manufacturer No:
IRFR9024PBF
Manufacturer:
Package:
ROHS COMPLIANT, DPAK-3
Description:
Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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IRFR9024PBF information
VISHAY IRFR9024PBF technical specifications, attributes, parameters and parts with similar specifications to VISHAY IRFR9024PBF.
- Type
- Parameter
- Pbfree Code
- Yes
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Transferred
- Ihs Manufacturer
- VISHAY SILICONIX
- Part Package Code
- TO-252
- Package Description
- ROHS COMPLIANT, DPAK-3
- Pin Count
- 3
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Samacsys Manufacturer
- Vishay
- Additional Feature
- AVALANCHE RATED
- Avalanche Energy Rating (Eas)
- 300 mJ
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 60 V
- Drain Current-Max (ID)
- 8.8 A
- Drain-source On Resistance-Max
- 0.28 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JEDEC-95 Code
- TO-252
- JESD-30 Code
- R-PSSO-G2
- JESD-609 Code
- e3
- Number of Elements
- 1
- Number of Terminals
- 2
- Operating Mode
- ENHANCEMENT MODE
- Package Body Material
- PLASTIC/EPOXY
- Package Shape
- RECTANGULAR
- Package Style
- SMALL OUTLINE
- Polarity/Channel Type
- P-CHANNEL
- Pulsed Drain Current-Max (IDM)
- 35 A
- Qualification Status
- Not Qualified
- Surface Mount
- YES
- Terminal Finish
- MATTE TIN
- Terminal Form
- GULL WING
- Terminal Position
- SINGLE
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
Download datasheets and manufacturer documentation for VISHAY IRFR9024PBF.
Datasheets:
IRFR9024PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 570pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -8.8A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 280mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -4V threshold voltage. Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFR9024PBF Features
a continuous drain current (ID) of -8.8A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
single MOSFETs transistor is 280mOhm
a threshold voltage of -4V
a 60V drain to source voltage (Vdss)
IRFR9024PBF Applications
There are a lot of Vishay Siliconix
IRFR9024PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
User Guide
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