LITTELFUSE IXFX180N10

Manufacturer No:

IXFX180N10

Manufacturer:

LITTELFUSE

Package:

TO-247-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 8m ? @ 90A, 10V ±20V 10900pF @ 25V 390nC @ 10V TO-247-3

Quantity:

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Payment:

In Stock :Available

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IXFX180N10 information

LITTELFUSE IXFX180N10 technical specifications, attributes, parameters and parts with similar specifications to LITTELFUSE IXFX180N10.

Type
Parameter

Factory Lead Time
8 Weeks

Mount
Through Hole

Mounting Type
Through Hole

Package / Case
TO-247-3

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
-55°C~150°C TJ

Packaging
Tube

Series
HiPerFET?

Published
2000

JESD-609 Code
e1

Pbfree Code
yes

Part Status
Obsolete

Number of Terminations
3

ECCN Code
EAR99

Resistance
8MOhm

Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)

Additional Feature
AVALANCHE RATED

Subcategory
FET General Purpose Power

Voltage - Rated DC
100V

Technology
MOSFET (Metal Oxide)

Current Rating
180A

Pin Count
3

Number of Elements
1

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Power Dissipation
560W

Case Connection
DRAIN

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
8m ? @ 90A, 10V

Vgs(th) (Max) @ Id
4V @ 8mA

Input Capacitance (Ciss) (Max) @ Vds
10900pF @ 25V

Current - Continuous Drain (Id) @ 25°C
180A Tc

Gate Charge (Qg) (Max) @ Vgs
390nC @ 10V

Rise Time
90ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
65 ns

Turn-Off Delay Time
140 ns

Continuous Drain Current (ID)
180A

Gate to Source Voltage (Vgs)
20V

Drain to Source Breakdown Voltage
100V

Pulsed Drain Current-Max (IDM)
720A

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for LITTELFUSE IXFX180N10.

Datasheets:

ixys-ixfx180n10-datasheets-8126.pdf

IXFX180N10 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 10900pF @ 25V.This device conducts a continuous drain current (ID) of 180A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 140 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 720A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IXFX180N10 Features

a continuous drain current (ID) of 180A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 140 ns
based on its rated peak drain current 720A.

IXFX180N10 Applications

There are a lot of IXYS
IXFX180N10 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

User Guide

PURCHASE

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.