

LITTELFUSE IXTP3N120
Manufacturer No:
IXTP3N120
Manufacturer:
Package:
TO-220-3
Description:
MOSFET (Metal Oxide) N-Channel Tube 4.5 ? @ 500mA, 10V ±20V 1350pF @ 25V 42nC @ 10V 1200V TO-220-3
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IXTP3N120 information
LITTELFUSE IXTP3N120 technical specifications, attributes, parameters and parts with similar specifications to LITTELFUSE IXTP3N120.
- Type
- Parameter
- Factory Lead Time
- 24 Weeks
- Mount
- Through Hole
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tube
- Series
- HiPerFET?
- Published
- 2004
- JESD-609 Code
- e3
- Pbfree Code
- yes
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- Not Applicable
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Resistance
- 4.5Ohm
- Terminal Finish
- Matte Tin (Sn)
- Additional Feature
- AVALANCHE RATED
- Voltage - Rated DC
- 1.2kV
- Technology
- MOSFET (Metal Oxide)
- Current Rating
- 3A
- Pin Count
- 3
- Number of Elements
- 1
- Element Configuration
- Single
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 200W
- Case Connection
- DRAIN
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 4.5 ? @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 5V @ 250?A
- Input Capacitance (Ciss) (Max) @ Vds
- 1350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C
- 3A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 42nC @ 10V
- Rise Time
- 15ns
- Drain to Source Voltage (Vdss)
- 1200V
- Drive Voltage (Max Rds On,Min Rds On)
- 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 18 ns
- Turn-Off Delay Time
- 32 ns
- Continuous Drain Current (ID)
- 3A
- Threshold Voltage
- 5V
- JEDEC-95 Code
- TO-220AB
- Gate to Source Voltage (Vgs)
- 20V
- Drain Current-Max (Abs) (ID)
- 3A
- Drain to Source Breakdown Voltage
- 1.1kV
Download datasheets and manufacturer documentation for LITTELFUSE IXTP3N120.
Datasheets:
IXTP3N120 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 700 mJ.A device's maximum input capacitance is 1350pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.1kV, and this device has a drain-to-source breakdown voltage of 1.1kV voltage.Its drain current is 3A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 5V.To operate this transistor, you need to apply a 1200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IXTP3N120 Features
the avalanche energy rating (Eas) is 700 mJ
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 1.1kV voltage
the turn-off delay time is 32 ns
a threshold voltage of 5V
a 1200V drain to source voltage (Vdss)
IXTP3N120 Applications
There are a lot of IXYS
IXTP3N120 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
User Guide
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