Renesas NP80N06MLG-S18-AY
Renesas NP80N06MLG-S18-AY

Renesas NP80N06MLG-S18-AY

Manufacturer No:

NP80N06MLG-S18-AY

Manufacturer:

Renesas

Package:

TO-220-3

Description:

MOSFET (Metal Oxide) N-Channel Tube 8.6m ? @ 40A, 10V ±20V 6900pF @ 25V 128nC @ 10V 60V TO-220-3

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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NP80N06MLG-S18-AY information

Renesas NP80N06MLG-S18-AY technical specifications, attributes, parameters and parts with similar specifications to Renesas NP80N06MLG-S18-AY.

  • Type
  • Parameter
  • Mount
  • Through Hole
  • Mounting Type
  • Through Hole
  • Package / Case
  • TO-220-3
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 175°C TJ
  • Packaging
  • Tube
  • Published
  • 2009
  • Part Status
  • Obsolete
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Additional Feature
  • LOGIC LEVEL COMPATIBLE
  • HTS Code
  • 8541.29.00.95
  • Subcategory
  • FET General Purpose Power
  • Technology
  • MOSFET (Metal Oxide)
  • Terminal Position
  • SINGLE
  • Pin Count
  • 3
  • Number of Elements
  • 1
  • Configuration
  • SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
  • 1.8W Ta 115W Tc
  • Operating Mode
  • ENHANCEMENT MODE
  • Case Connection
  • DRAIN
  • Turn On Delay Time
  • 17 ns
  • Transistor Application
  • SWITCHING
  • Rds On (Max) @ Id, Vgs
  • 8.6m ? @ 40A, 10V
  • Vgs(th) (Max) @ Id
  • 2.5V @ 250?A
  • Input Capacitance (Ciss) (Max) @ Vds
  • 6900pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
  • 80A Tc
  • Gate Charge (Qg) (Max) @ Vgs
  • 128nC @ 10V
  • Rise Time
  • 13ns
  • Drain to Source Voltage (Vdss)
  • 60V
  • Drive Voltage (Max Rds On,Min Rds On)
  • 4.5V 10V
  • Vgs (Max)
  • ±20V
  • Fall Time (Typ)
  • 7 ns
  • Turn-Off Delay Time
  • 70 ns
  • Continuous Drain Current (ID)
  • 80A
  • JEDEC-95 Code
  • TO-220AB
  • Gate to Source Voltage (Vgs)
  • 20V
  • Drain-source On Resistance-Max
  • 0.0086Ohm
  • DS Breakdown Voltage-Min
  • 60V
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for Renesas NP80N06MLG-S18-AY.

Datasheets:

ConflictMineralStatement:

NP80N06MLG-S18-AY Overview


A device's maximal input capacitance is 6900pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 70 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

NP80N06MLG-S18-AY Features


a continuous drain current (ID) of 80A
the turn-off delay time is 70 ns
a 60V drain to source voltage (Vdss)


NP80N06MLG-S18-AY Applications


There are a lot of Renesas Electronics America
NP80N06MLG-S18-AY applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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Step1：Prepare product

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Step2：Desiccant Protection

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Step3：Vacuum Packaging

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Step4：Individual Package

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Step5：Anti-collision Filling

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