NEXPERIA PBHV8115Z,115
NEXPERIA PBHV8115Z,115

NEXPERIA PBHV8115Z,115

Manufacturer No:

PBHV8115Z,115

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

NPN 150°C TJ 100nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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PBHV8115Z,115 information

NEXPERIA PBHV8115Z,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBHV8115Z,115.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Number of Pins
  • 4
  • Transistor Element Material
  • SILICON
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2008
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Max Power Dissipation
  • 1.4W
  • Terminal Form
  • GULL WING
  • Frequency
  • 30MHz
  • Base Part Number
  • PBHV8115
  • Pin Count
  • 4
  • Number of Elements
  • 1
  • Element Configuration
  • Dual
  • Power Dissipation
  • 1.4W
  • Case Connection
  • COLLECTOR
  • Gain Bandwidth Product
  • 30MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 150V
  • Max Collector Current
  • 1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 50 @ 500mA 10V
  • Current - Collector Cutoff (Max)
  • 100nA
  • Vce Saturation (Max) @ Ib, Ic
  • 350mV @ 200mA, 1A
  • Collector Emitter Breakdown Voltage
  • 150V
  • Transition Frequency
  • 30MHz
  • Max Breakdown Voltage
  • 150V
  • Collector Base Voltage (VCBO)
  • 400V
  • Emitter Base Voltage (VEBO)
  • 6V
  • hFE Min
  • 100
  • REACH SVHC
  • No SVHC
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PBHV8115Z,115.

PBHV8115Z,115 Overview


In this device, the DC current gain is 50 @ 500mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 350mV @ 200mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.30MHz is present in the transition frequency.An input voltage of 150V volts is the breakdown voltage.Maximum collector currents can be below 1A volts.

PBHV8115Z,115 Features


the DC current gain for this device is 50 @ 500mA 10V
the vce saturation(Max) is 350mV @ 200mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 30MHz


PBHV8115Z,115 Applications


There are a lot of Nexperia USA Inc.
PBHV8115Z,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1:Prepare product

Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

Step6:Packaging Box

Step6:Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.