NEXPERIA PBHV8540Z,115
NEXPERIA PBHV8540Z,115

NEXPERIA PBHV8540Z,115

Manufacturer No:

PBHV8540Z,115

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

NPN 150°C TJ 100nA 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

Price not displayed? Please send an RFQ, and we will respond immediately.

PBHV8540Z,115 information

NEXPERIA PBHV8540Z,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBHV8540Z,115.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Mount
  • Surface Mount
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-261-4, TO-261AA
  • Number of Pins
  • 4
  • Transistor Element Material
  • SILICON
  • Collector-Emitter Breakdown Voltage
  • 400V
  • Number of Elements
  • 1
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2009
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 4
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Max Power Dissipation
  • 1.4W
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Frequency
  • 30MHz
  • Time@Peak Reflow Temperature-Max (s)
  • 30
  • Base Part Number
  • PBHV8540
  • Element Configuration
  • Single
  • Power Dissipation
  • 1.4W
  • Case Connection
  • COLLECTOR
  • Transistor Application
  • SWITCHING
  • Gain Bandwidth Product
  • 30MHz
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • Collector Emitter Voltage (VCEO)
  • 400V
  • Max Collector Current
  • 500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 10 @ 300mA 10V
  • Current - Collector Cutoff (Max)
  • 100nA
  • Vce Saturation (Max) @ Ib, Ic
  • 250mV @ 60mA, 300mA
  • Transition Frequency
  • 30MHz
  • Max Breakdown Voltage
  • 400V
  • Collector Base Voltage (VCBO)
  • 500V
  • Emitter Base Voltage (VEBO)
  • 6V
  • REACH SVHC
  • No SVHC
  • Radiation Hardening
  • No
  • RoHS Status
  • RoHS Compliant
  • Lead Free
  • Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PBHV8540Z,115.

PBHV8540Z,115 Overview


In this device, the DC current gain is 10 @ 300mA 10V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 60mA, 300mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 30MHz.Input voltage breakdown is available at 400V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.

PBHV8540Z,115 Features


the DC current gain for this device is 10 @ 300mA 10V
the vce saturation(Max) is 250mV @ 60mA, 300mA
the emitter base voltage is kept at 6V
a transition frequency of 30MHz


PBHV8540Z,115 Applications


There are a lot of Nexperia USA Inc.
PBHV8540Z,115 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

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Step1:Prepare product

Step2:Desiccant Protection

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step3:Vacuum Packaging

Step4:Individual Package

Step4:Individual Package

Step5:Anti-collision Filling

Step5:Anti-collision Filling

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SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.