NEXPERIA PBSS304NZ,135

Manufacturer No:

PBSS304NZ,135

Manufacturer:

NEXPERIA

Package:

TO-261-4, TO-261AA

Description:

NPN 150°C TJ 100nA ICBO 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

Quantity:

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PBSS304NZ,135 information

NEXPERIA PBSS304NZ,135 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS304NZ,135.

Type
Parameter

Factory Lead Time
4 Weeks

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
TO-261-4, TO-261AA

Number of Pins
73

Transistor Element Material
SILICON

Collector-Emitter Breakdown Voltage
60V

Number of Elements
1

Operating Temperature
150°C TJ

Packaging
Tape & Reel (TR)

Published
2009

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

ECCN Code
EAR99

Terminal Finish
Tin (Sn)

Max Power Dissipation
2W

Terminal Position
DUAL

Terminal Form
GULL WING

Frequency
130MHz

Base Part Number
PBSS304N

Pin Count
4

JESD-30 Code
R-PDSO-G4

Power Dissipation
2W

Case Connection
COLLECTOR

Transistor Application
SWITCHING

Gain Bandwidth Product
130MHz

Polarity/Channel Type
NPN

Transistor Type
NPN

Collector Emitter Voltage (VCEO)
60V

Max Collector Current
5.2A

DC Current Gain (hFE) (Min) @ Ic, Vce
250 @ 2A 2V

Current - Collector Cutoff (Max)
100nA ICBO

Vce Saturation (Max) @ Ib, Ic
280mV @ 260mA, 5.2A

Transition Frequency
130MHz

Max Breakdown Voltage
60V

Collector Base Voltage (VCBO)
60V

Emitter Base Voltage (VEBO)
5V

VCEsat-Max
0.28 V

Collector-Base Capacitance-Max
70pF

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PBSS304NZ,135.

PBSS304NZ,135 Overview

In this device, the DC current gain is 250 @ 2A 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 280mV @ 260mA, 5.2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 130MHz.Input voltage breakdown is available at 60V volts.Single BJT transistor is possible for the collector current to fall as low as 5.2A volts at Single BJT transistors maximum.

PBSS304NZ,135 Features

the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 280mV @ 260mA, 5.2A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz

PBSS304NZ,135 Applications

There are a lot of Nexperia USA Inc.
PBSS304NZ,135 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

User Guide

PURCHASE

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.