NEXPERIA PBSS8110T,215
NEXPERIA PBSS8110T,215

NEXPERIA PBSS8110T,215

Manufacturer No:

PBSS8110T,215

Manufacturer:

NEXPERIA

Package:

TO-236-3, SC-59, SOT-23-3

Description:

NPN 150°C TJ 100nA 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

Delivery:

DHL
DHL
DHL
DHL

Payment:

DHL
DHL
DHL
DHL
DHL
DHL
DHL

In Stock :Available

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PBSS8110T,215 information

NEXPERIA PBSS8110T,215 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS8110T,215.

  • Type
  • Parameter
  • Factory Lead Time
  • 4 Weeks
  • Mounting Type
  • Surface Mount
  • Package / Case
  • TO-236-3, SC-59, SOT-23-3
  • Surface Mount
  • YES
  • Number of Pins
  • 3
  • Transistor Element Material
  • SILICON
  • Current-Collector (Ic) (Max)
  • 1A
  • Number of Elements
  • 1
  • Operating Temperature
  • 150°C TJ
  • Packaging
  • Tape & Reel (TR)
  • Published
  • 2001
  • JESD-609 Code
  • e3
  • Part Status
  • Active
  • Moisture Sensitivity Level (MSL)
  • 1 (Unlimited)
  • Number of Terminations
  • 3
  • ECCN Code
  • EAR99
  • Terminal Finish
  • Tin (Sn)
  • Terminal Position
  • DUAL
  • Terminal Form
  • GULL WING
  • Peak Reflow Temperature (Cel)
  • 260
  • Time@Peak Reflow Temperature-Max (s)
  • 40
  • Base Part Number
  • PBSS8110
  • Pin Count
  • 3
  • Qualification Status
  • Not Qualified
  • Power - Max
  • 480mW
  • Transistor Application
  • SWITCHING
  • Polarity/Channel Type
  • NPN
  • Transistor Type
  • NPN
  • DC Current Gain (hFE) (Min) @ Ic, Vce
  • 150 @ 250mA 10V
  • Current - Collector Cutoff (Max)
  • 100nA
  • Vce Saturation (Max) @ Ib, Ic
  • 200mV @ 100mA, 1A
  • Voltage - Collector Emitter Breakdown (Max)
  • 100V
  • Transition Frequency
  • 100MHz
  • Frequency - Transition
  • 100MHz
  • RoHS Status
  • RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PBSS8110T,215.

Datasheets:

PCN Design/Specification:

PCN Assembly/Origin:

PCN Packaging:

RohsStatement:

PBSS8110T,215 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 250mA 10V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 100MHz in the part.Single BJT transistor shows a 100V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

PBSS8110T,215 Features


the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
a transition frequency of 100MHz


PBSS8110T,215 Applications


There are a lot of Nexperia USA Inc.
PBSS8110T,215 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting

User Guide

PURCHASE

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Step1：Prepare product

Step1：Prepare product

Step2：Desiccant Protection

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step3：Vacuum Packaging

Step4：Individual Package

Step4：Individual Package

Step5：Anti-collision Filling

Step5：Anti-collision Filling

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Step6：Packaging Box

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SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.

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