

NEXPERIA PBSS8110X,135
Manufacturer No:
PBSS8110X,135
Manufacturer:
Package:
TO-243AA
Description:
NPN 150°C TJ 100nA 1 Elements TO-243AA Tape & Reel (TR) Surface Mount
Quantity:
Delivery:




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PBSS8110X,135 information
NEXPERIA PBSS8110X,135 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PBSS8110X,135.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Number of Pins
- 3
- Supplier Device Package
- SOT-89
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2007
- Tolerance
- 5%
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Max Operating Temperature
- 150°C
- Min Operating Temperature
- -65°C
- Max Power Dissipation
- 2W
- Frequency
- 100MHz
- Base Part Number
- PBSS8110
- Number of Elements
- 1
- Polarity
- NPN
- Element Configuration
- Single
- Power Dissipation
- 2W
- Power - Max
- 2W
- Test Current
- 5mA
- Gain Bandwidth Product
- 100MHz
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 100V
- Max Collector Current
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 150 @ 250mA 10V
- Current - Collector Cutoff (Max)
- 100nA
- Vce Saturation (Max) @ Ib, Ic
- 200mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage
- 100V
- Voltage - Collector Emitter Breakdown (Max)
- 100V
- Current - Collector (Ic) (Max)
- 1A
- Max Breakdown Voltage
- 100V
- Frequency - Transition
- 100MHz
- Collector Base Voltage (VCBO)
- 120V
- Emitter Base Voltage (VEBO)
- 5V
- REACH SVHC
- No SVHC
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA PBSS8110X,135.
Datasheets:
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PBSS8110X,135 Overview
This device has a DC current gain of 150 @ 250mA 10V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.As a result, it can handle voltages as low as 100V volts.Single BJT transistor comes in a supplier device package of SOT-89.Detection of Collector Emitter Breakdown at 100V maximal voltage is present.The maximum collector current is 1A volts.
PBSS8110X,135 Features
the DC current gain for this device is 150 @ 250mA 10V
the vce saturation(Max) is 200mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the supplier device package of SOT-89
PBSS8110X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS8110X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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