

NEXPERIA PMST4401,115
Manufacturer No:
PMST4401,115
Manufacturer:
Package:
SC-70, SOT-323
Description:
NPN 150°C TJ 50nA ICBO 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
Quantity:
Delivery:




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In Stock :Available
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PMST4401,115 information
NEXPERIA PMST4401,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PMST4401,115.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Collector-Emitter Breakdown Voltage
- 40V
- Number of Elements
- 1
- Operating Temperature
- 150°C TJ
- Packaging
- Tape & Reel (TR)
- Series
- Automotive, AEC-Q101
- Published
- 2009
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Terminal Finish
- Tin (Sn)
- Max Power Dissipation
- 200mW
- Terminal Position
- DUAL
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Frequency
- 250MHz
- Time@Peak Reflow Temperature-Max (s)
- 40
- Element Configuration
- Single
- Power Dissipation
- 200mW
- Transistor Application
- SWITCHING
- Gain Bandwidth Product
- 250MHz
- Polarity/Channel Type
- NPN
- Transistor Type
- NPN
- Collector Emitter Voltage (VCEO)
- 40V
- Max Collector Current
- 600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 100 @ 150mA 1V
- Current - Collector Cutoff (Max)
- 50nA ICBO
- Vce Saturation (Max) @ Ib, Ic
- 750mV @ 50mA, 500mA
- Transition Frequency
- 250MHz
- Max Breakdown Voltage
- 40V
- Collector Base Voltage (VCBO)
- 60V
- Emitter Base Voltage (VEBO)
- 6V
- VCEsat-Max
- 0.75 V
- Turn Off Time-Max (toff)
- 255ns
- Collector-Base Capacitance-Max
- 8pF
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for NEXPERIA PMST4401,115.
Datasheets:
PCN Packaging:
RohsStatement:
PMST4401,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 1V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 50mA, 500mA.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 40V volts that it can take.Collector current can be as low as 600mA volts at its maximum.
PMST4401,115 Features
the DC current gain for this device is 100 @ 150mA 1V
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
PMST4401,115 Applications
There are a lot of Nexperia USA Inc.
PMST4401,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
User Guide
Please verify all part numbers, quantities, and packaging preferences before placing your order. If substitutions are acceptable, please indicate this clearly. For time-sensitive projects, confirm estimated delivery dates and stock availability in advance. Once submitted, changes or cancellations may not be possible, especially for items marked as non-cancellable/non-returnable (NCNR). For international shipments, please ensure all import documentation is complete and accurate to avoid delays.
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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