

NEXPERIA PSMN012-60YS,115
Manufacturer No:
PSMN012-60YS,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
N-Channel Tape & Reel (TR) 11.1m Ω @ 15A, 10V ±20V 1685pF @ 30V 28.4nC @ 10V 60V SC-100, SOT-669
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PSMN012-60YS,115 information
NEXPERIA PSMN012-60YS,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN012-60YS,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 59A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 89W Tc
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2010
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Terminal Finish
- Tin (Sn)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Reach Compliance Code
- not_compliant
- Pin Count
- 4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 11.1m Ω @ 15A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1685pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs
- 28.4nC @ 10V
- Drain to Source Voltage (Vdss)
- 60V
- Vgs (Max)
- ±20V
- Continuous Drain Current (ID)
- 59A
- JEDEC-95 Code
- MO-235
- Drain-source On Resistance-Max
- 0.0111Ohm
- Pulsed Drain Current-Max (IDM)
- 236A
- DS Breakdown Voltage-Min
- 60V
- Avalanche Energy Rating (Eas)
- 71 mJ
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NEXPERIA PSMN012-60YS,115.
PCN Packaging:
RohsStatement:
PSMN012-60YS,115 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 71 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1685pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 59A.Peak drain current for this device is 236A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.
PSMN012-60YS,115 Features
the avalanche energy rating (Eas) is 71 mJ
a continuous drain current (ID) of 59A
based on its rated peak drain current 236A.
a 60V drain to source voltage (Vdss)
PSMN012-60YS,115 Applications
There are a lot of Nexperia USA Inc.
PSMN012-60YS,115 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
User Guide
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