

NEXPERIA PSMN059-150Y,115
Manufacturer No:
PSMN059-150Y,115
Manufacturer:
Package:
SC-100, SOT-669
Description:
N-Channel Tape & Reel (TR) 59m Ω @ 12A, 10V ±20V 1529pF @ 30V 27.9nC @ 10V SC-100, SOT-669
Quantity:
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In Stock :Available
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PSMN059-150Y,115 information
NEXPERIA PSMN059-150Y,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN059-150Y,115.
- Type
- Parameter
- Factory Lead Time
- 12 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Current - Continuous Drain (Id) @ 25℃
- 43A Tc
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Number of Elements
- 1
- Power Dissipation (Max)
- 113W Tc
- Turn Off Delay Time
- 54.2 ns
- Operating Temperature
- -55°C~150°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2013
- JESD-609 Code
- e3
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- ECCN Code
- EAR99
- Resistance
- 59MOhm
- Terminal Finish
- Tin (Sn)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Peak Reflow Temperature (Cel)
- 260
- Pin Count
- 4
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 113W
- Case Connection
- DRAIN
- Turn On Delay Time
- 14.2 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 59m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 1529pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs
- 27.9nC @ 10V
- Rise Time
- 42ns
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 11.1 ns
- Continuous Drain Current (ID)
- 43A
- JEDEC-95 Code
- MO-235
- Gate to Source Voltage (Vgs)
- 20V
- Max Dual Supply Voltage
- 150V
- Drain to Source Breakdown Voltage
- 150V
- Avalanche Energy Rating (Eas)
- 255 mJ
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NEXPERIA PSMN059-150Y,115.
Datasheets:
PCN Packaging:
RohsStatement:
PSMN059-150Y,115 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 255 mJ (Eas).Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1529pF @ 30V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 43A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A turn-on delay time of 14.2 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 150V, it can support the maximum dual supply voltage.
PSMN059-150Y,115 Features
the avalanche energy rating (Eas) is 255 mJ
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 150V voltage
PSMN059-150Y,115 Applications
There are a lot of Nexperia USA Inc.
PSMN059-150Y,115 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
User Guide
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