NEXPERIA PSMN069-100YS,115

Manufacturer No:

PSMN069-100YS,115

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 72.4m ? @ 5A, 10V ±20V 645pF @ 50V 14nC @ 10V SC-100, SOT-669

Quantity:

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PSMN069-100YS,115 information

NEXPERIA PSMN069-100YS,115 technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN069-100YS,115.

Type
Parameter

Factory Lead Time
12 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2010

JESD-609 Code
e3

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Resistance
72.4MOhm

Terminal Finish
Tin (Sn)

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
30

Pin Count
4

Number of Elements
1

Power Dissipation-Max
56W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
10 ns

FET Type
N-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
72.4m ? @ 5A, 10V

Vgs(th) (Max) @ Id
4V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
645pF @ 50V

Current - Continuous Drain (Id) @ 25°C
17A Tc

Gate Charge (Qg) (Max) @ Vgs
14nC @ 10V

Rise Time
7ns

Drive Voltage (Max Rds On,Min Rds On)
10V

Vgs (Max)
±20V

Fall Time (Typ)
5 ns

Turn-Off Delay Time
19 ns

Continuous Drain Current (ID)
17A

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
100V

Drain to Source Breakdown Voltage
90V

Pulsed Drain Current-Max (IDM)
68A

Radiation Hardening
No

RoHS Status
RoHS Compliant

Lead Free
Lead Free

Download datasheets and manufacturer documentation for NEXPERIA PSMN069-100YS,115.

PSMN069-100YS,115 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 645pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 90V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 90V.As a result of its turn-off delay time, which is 19 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 68A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 100V.In addition to reducing power consumption, this device uses drive voltage (10V).

PSMN069-100YS,115 Features

a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 90V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 68A.

PSMN069-100YS,115 Applications

There are a lot of Nexperia USA Inc.
PSMN069-100YS,115 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

User Guide

PURCHASE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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SHIPPING METHOD

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DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.