NEXPERIA PSMN1R2-30YLDX

Manufacturer No:

PSMN1R2-30YLDX

Manufacturer:

NEXPERIA

Package:

SC-100, SOT-669

Description:

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 1.24m ? @ 25A, 10V ±20V 4616pF @ 15V 68nC @ 10V SC-100, SOT-669

Quantity:

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In Stock :Available

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PSMN1R2-30YLDX information

NEXPERIA PSMN1R2-30YLDX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN1R2-30YLDX.

Type
Parameter

Factory Lead Time
4 Weeks

Mounting Type
Surface Mount

Package / Case
SC-100, SOT-669

Surface Mount
YES

Number of Pins
4

Transistor Element Material
SILICON

Operating Temperature
-55°C~175°C TJ

Packaging
Tape & Reel (TR)

Published
2014

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
4

Additional Feature
HIGH RELIABILITY

Technology
MOSFET (Metal Oxide)

Terminal Form
GULL WING

Pin Count
4

Number of Elements
1

Number of Channels
1

Power Dissipation-Max
194W Tc

Element Configuration
Single

Operating Mode
ENHANCEMENT MODE

Case Connection
DRAIN

Turn On Delay Time
25.3 ns

FET Type
N-Channel

Rds On (Max) @ Id, Vgs
1.24m ? @ 25A, 10V

Vgs(th) (Max) @ Id
2.2V @ 1mA

Input Capacitance (Ciss) (Max) @ Vds
4616pF @ 15V

Current - Continuous Drain (Id) @ 25°C
100A Tc

Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V

Rise Time
31ns

Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V

Vgs (Max)
±20V

Fall Time (Typ)
25.5 ns

Turn-Off Delay Time
38.7 ns

Continuous Drain Current (ID)
100A

JEDEC-95 Code
MO-235

Gate to Source Voltage (Vgs)
20V

Max Dual Supply Voltage
30V

Drain to Source Breakdown Voltage
30V

Radiation Hardening
No

RoHS Status
RoHS Compliant

Download datasheets and manufacturer documentation for NEXPERIA PSMN1R2-30YLDX.

PSMN1R2-30YLDX Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 4616pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38.7 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 25.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 30V, it supports the maximal dual supply voltage.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

PSMN1R2-30YLDX Features

a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38.7 ns

PSMN1R2-30YLDX Applications

There are a lot of Nexperia USA Inc.
PSMN1R2-30YLDX applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

User Guide

PURCHASE

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IMPORTANT NOTICE

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Step1：Prepare product

Step2：Desiccant Protection

Step3：Vacuum Packaging

Step4：Individual Package

Step5：Anti-collision Filling

Step6：Packaging Box

SHIPPING COST

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2. Some specific products need to reach the minimum order quantity.
3. It may cost additional remote fees for delivery if you are in a remote area.

SHIPPING METHOD

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

DELIVERY TIME

1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
2. For in-stock parts, orders normally could be shipped out within 1-2days.