

NEXPERIA PSMN2R4-30YLDX
Manufacturer No:
PSMN2R4-30YLDX
Manufacturer:
Package:
SC-100, SOT-669
Description:
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2.4m ? @ 25A, 10V ±20V 2256pF @ 15V 31.3nC @ 10V SC-100, SOT-669
Quantity:
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In Stock :Available
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PSMN2R4-30YLDX information
NEXPERIA PSMN2R4-30YLDX technical specifications, attributes, parameters and parts with similar specifications to NEXPERIA PSMN2R4-30YLDX.
- Type
- Parameter
- Factory Lead Time
- 4 Weeks
- Mounting Type
- Surface Mount
- Package / Case
- SC-100, SOT-669
- Surface Mount
- YES
- Number of Pins
- 4
- Transistor Element Material
- SILICON
- Operating Temperature
- -55°C~175°C TJ
- Packaging
- Tape & Reel (TR)
- Published
- 2014
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 4
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- SINGLE
- Terminal Form
- GULL WING
- Pin Count
- 4
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Number of Channels
- 1
- Power Dissipation-Max
- 106W Tc
- Operating Mode
- ENHANCEMENT MODE
- Case Connection
- DRAIN
- Turn On Delay Time
- 16.3 ns
- FET Type
- N-Channel
- Rds On (Max) @ Id, Vgs
- 2.4m ? @ 25A, 10V
- Vgs(th) (Max) @ Id
- 2.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds
- 2256pF @ 15V
- Current - Continuous Drain (Id) @ 25°C
- 100A Tc
- Gate Charge (Qg) (Max) @ Vgs
- 31.3nC @ 10V
- Rise Time
- 27.5ns
- Drive Voltage (Max Rds On,Min Rds On)
- 4.5V 10V
- Vgs (Max)
- ±20V
- Fall Time (Typ)
- 13.9 ns
- Turn-Off Delay Time
- 17.4 ns
- Continuous Drain Current (ID)
- 100A
- JEDEC-95 Code
- MO-235
- Gate to Source Voltage (Vgs)
- 2.2V
- Max Dual Supply Voltage
- 30V
- Pulsed Drain Current-Max (IDM)
- 625A
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
Download datasheets and manufacturer documentation for NEXPERIA PSMN2R4-30YLDX.
Datasheets:
PCN Packaging:
RohsStatement:
PSMN2R4-30YLDX Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2256pF @ 15V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 17.4 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 625A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16.3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 2.2V.With 30V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
PSMN2R4-30YLDX Features
a continuous drain current (ID) of 100A
the turn-off delay time is 17.4 ns
based on its rated peak drain current 625A.
PSMN2R4-30YLDX Applications
There are a lot of Nexperia USA Inc.
PSMN2R4-30YLDX applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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