ROHM RTF016N05TL
Manufacturer No:
RTF016N05TL
Manufacturer:
Package:
3-SMD, Flat Lead
Description:
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 190m ? @ 1.6A, 4.5V ±12V 150pF @ 10V 2.3nC @ 4.5V 45V 3-SMD, Flat Lead
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RTF016N05TL information
ROHM RTF016N05TL technical specifications, attributes, parameters and parts with similar specifications to ROHM RTF016N05TL.
- Type
- Parameter
- Factory Lead Time
- 16 Weeks
- Mount
- Surface Mount
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Lead
- Number of Pins
- 3
- Transistor Element Material
- SILICON
- Operating Temperature
- 150°C TJ
- Packaging
- Cut Tape (CT)
- Published
- 2012
- Part Status
- Active
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Number of Terminations
- 3
- ECCN Code
- EAR99
- Technology
- MOSFET (Metal Oxide)
- Terminal Position
- DUAL
- Pin Count
- 3
- Number of Elements
- 1
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max
- 320mW Ta
- Operating Mode
- ENHANCEMENT MODE
- Turn On Delay Time
- 8 ns
- FET Type
- N-Channel
- Transistor Application
- SWITCHING
- Rds On (Max) @ Id, Vgs
- 190m ? @ 1.6A, 4.5V
- Input Capacitance (Ciss) (Max) @ Vds
- 150pF @ 10V
- Current - Continuous Drain (Id) @ 25°C
- 1.6A Ta
- Gate Charge (Qg) (Max) @ Vgs
- 2.3nC @ 4.5V
- Rise Time
- 14ns
- Drain to Source Voltage (Vdss)
- 45V
- Drive Voltage (Max Rds On,Min Rds On)
- 2.5V 4.5V
- Vgs (Max)
- ±12V
- Fall Time (Typ)
- 10 ns
- Turn-Off Delay Time
- 16 ns
- Continuous Drain Current (ID)
- 1.6A
- Gate to Source Voltage (Vgs)
- 12V
- Drain-source On Resistance-Max
- 0.28Ohm
- DS Breakdown Voltage-Min
- 45V
- Radiation Hardening
- No
- RoHS Status
- RoHS Compliant
- Lead Free
- Lead Free
Download datasheets and manufacturer documentation for ROHM RTF016N05TL.
RTF016N05TL Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 150pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.The DS breakdown voltage should be maintained above 45V to maintain normal operation.To operate this transistor, you will need a 45V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.5V 4.5V).
RTF016N05TL Features
a continuous drain current (ID) of 1.6A
the turn-off delay time is 16 ns
a 45V drain to source voltage (Vdss)
RTF016N05TL Applications
There are a lot of ROHM Semiconductor
RTF016N05TL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

Step1:Prepare product

Step2:Desiccant Protection

Step3:Vacuum Packaging

Step4:Individual Package

Step5:Anti-collision Filling

Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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