ROHM RV1C002UNT2CL
Manufacturer No:
RV1C002UNT2CL
Manufacturer:
Package:
ULTRA SMALL, VML0806, 3 PIN
Description:
Description: Small Signal Field-Effect Transistor, 0.15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA SMALL, VML0806, 3 PIN
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RV1C002UNT2CL information
ROHM RV1C002UNT2CL technical specifications, attributes, parameters and parts with similar specifications to ROHM RV1C002UNT2CL.
- Type
- Parameter
- RoHS Status
- RoHS Compliant
- Part Life Cycle Code
- Not Recommended
- Ihs Manufacturer
- ROHM CO LTD
- Package Description
- ULTRA SMALL, VML0806, 3 PIN
- Reach Compliance Code
- compliant
- ECCN Code
- EAR99
- Factory Lead Time
- 21 Weeks
- Samacsys Manufacturer
- ROHM Semiconductor
- Case Connection
- DRAIN
- Configuration
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min
- 20 V
- Drain Current-Max (ID)
- 0.15 A
- Drain-source On Resistance-Max
- 3.4 Ω
- FET Technology
- METAL-OXIDE SEMICONDUCTOR
- JESD-30 Code
- R-XBCC-N3
- JESD-609 Code
- e3
- Moisture Sensitivity Level
- 1
- Number of Elements
- 1
- Number of Terminals
- 3
- Operating Mode
- ENHANCEMENT MODE
- Operating Temperature-Max
- 150 °C
- Package Body Material
- UNSPECIFIED
- Package Shape
- RECTANGULAR
- Package Style
- CHIP CARRIER
- Polarity/Channel Type
- N-CHANNEL
- Power Dissipation-Max (Abs)
- 0.1 W
- Surface Mount
- YES
- Terminal Finish
- Tin (Sn)
- Terminal Form
- NO LEAD
- Terminal Position
- BOTTOM
- Time@Peak Reflow Temperature-Max (s)
- 10
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
Download datasheets and manufacturer documentation for ROHM RV1C002UNT2CL.
RV1C002UNT2CL Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 12pF @ 10V.This device conducts a continuous drain current (ID) of 150mA, which is the maximum continuous current transistor can conduct.Using VGS=20V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 20V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.15A.When the device is turned off, a turn-off delay time of 12 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.In order to reduce power consumption, this device uses a drive voltage of 1.2V 4.5V volts (1.2V 4.5V).
RV1C002UNT2CL Features
a continuous drain current (ID) of 150mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 12 ns
RV1C002UNT2CL Applications
There are a lot of ROHM Semiconductor
RV1C002UNT2CL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
User Guide
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Quotations are subject to stock availability and may vary with market conditions. Prices and lead times are not guaranteed until a purchase order is confirmed. Ensure your contact details are correct to avoid delays in response.

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Step4:Individual Package

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Step6:Packaging Box
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DELIVERY TIME1. Once the goods are shipped, estimated delivery time depends on the shipping methods you chose: FedEx International, 5-7 business days.
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