ROHM RZM002P02T2L

Manufacturer No:

RZM002P02T2L

Manufacturer:

ROHM

Package:

SOT-723

Description:

MOSFET (Metal Oxide) P-Channel Cut Tape (CT) 1.2 ? @ 200mA, 4.5V ±10V 115pF @ 10V 1.4nC @ 4.5V 20V SOT-723

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RZM002P02T2L information

ROHM RZM002P02T2L technical specifications, attributes, parameters and parts with similar specifications to ROHM RZM002P02T2L.

Type
Parameter

Factory Lead Time
16 Weeks

Contact Plating
Copper, Tin

Mount
Surface Mount

Mounting Type
Surface Mount

Package / Case
SOT-723

Number of Pins
3

Transistor Element Material
SILICON

Operating Temperature
150°C TJ

Packaging
Cut Tape (CT)

Published
2009

JESD-609 Code
e2

Pbfree Code
yes

Part Status
Active

Moisture Sensitivity Level (MSL)
1 (Unlimited)

Number of Terminations
3

ECCN Code
EAR99

Terminal Finish
Tin/Copper (Sn/Cu)

Subcategory
Other Transistors

Technology
MOSFET (Metal Oxide)

Terminal Position
DUAL

Terminal Form
FLAT

Peak Reflow Temperature (Cel)
260

Time@Peak Reflow Temperature-Max (s)
10

Pin Count
3

Configuration
SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max
150mW Ta

Operating Mode
ENHANCEMENT MODE

Power Dissipation
150mW

Turn On Delay Time
6 ns

FET Type
P-Channel

Transistor Application
SWITCHING

Rds On (Max) @ Id, Vgs
1.2 ? @ 200mA, 4.5V

Vgs(th) (Max) @ Id
1V @ 100?A

Input Capacitance (Ciss) (Max) @ Vds
115pF @ 10V

Current - Continuous Drain (Id) @ 25°C
200mA Ta

Gate Charge (Qg) (Max) @ Vgs
1.4nC @ 4.5V

Rise Time
4ns

Drain to Source Voltage (Vdss)
20V

Drive Voltage (Max Rds On,Min Rds On)
1.2V 4.5V

Vgs (Max)
±10V

Fall Time (Typ)
17 ns

Turn-Off Delay Time
17 ns

Continuous Drain Current (ID)
200mA

Gate to Source Voltage (Vgs)
10V

Drain Current-Max (Abs) (ID)
0.2A

Drain to Source Breakdown Voltage
-20V

Radiation Hardening
No

Download datasheets and manufacturer documentation for ROHM RZM002P02T2L.

Datasheets:

rohmsemiconductor-rzm002p02t2l-datasheets-4833.pdf

RZM002P02T2L Overview

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 115pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 200mA amps.In this device, the drain-source breakdown voltage is -20V and VGS=-20V, so the drain-source breakdown voltage is -20V in this case.A device can conduct a maximum continuous current of [0.2A] according to its drain current.It is [17 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 6 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 10V.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (1.2V 4.5V).

RZM002P02T2L Features

a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 17 ns
a 20V drain to source voltage (Vdss)

RZM002P02T2L Applications

There are a lot of ROHM Semiconductor
RZM002P02T2L applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

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